GP1600FSS12 Dynex Semiconductor, GP1600FSS12 Datasheet - Page 2

• Manufacturer Part Number: GP1600FSS12
• Description: Powerline N-channel Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1600FSS12
ABSOLUTE MAXIMUM RATINGS
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
THERMAL AND MECHANICAL RATINGS
2/11
T
Symbol
Symbol
case
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
R
R
R
V
V
I
P
T
C(PK)
V
th(c-h)
th(j-c)
T
I
th(j-c)
GES
CES
max
-
stg
C
isol
= 25˚C unless stated otherwise.
j
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Thermal resistance - transistor
Thermal resistance - Case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Thermal resistance - diode
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum power dissipation
Isolation voltage
Parameter
Parameter
V
DC, T
DC, T
1ms, T
T
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
case
GE
= 0V
= 25˚C (Transistor)
case
case
case
= 25˚C
= 75˚C
Transistor
Mounting - M6
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Diode
Electrical connections - M4
Electrical connections - M8
= 75˚C
DC junction to case
Test Conditions
Conditions
-
-
-
Min.
–40
11400
-
-
-
-
-
-
-
-
Max.
2100
1600
3200
1200
2500
20
Max.
125
150
125
11
20
10
8
5
2
Units
o
o
o
Units
C/kW
W
C/kW
C/kW
V
V
A
A
A
V
Nm
Nm
Nm
o
o
o
C
C
C