GP1600FSS12 Dynex Semiconductor, GP1600FSS12 Datasheet - Page 6

• Manufacturer Part Number: GP1600FSS12
• Description: Powerline N-channel Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1600FSS12
CURVES
6/11
2000
1600
3200
2800
2400
1200
400
350
300
250
200
150
100
400
800
50
0
Fig.7 Typical turn-on energy vs collector current
0
0
0
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Conditions:
T
V
V
Common emitter
T
case
CE
GE
case
= 600V,
= 15V
200
Fig.5 Typical output characteristics
= 25˚C,
= 25˚C
1.0
400
Collector-emitter voltage, V
Collector current, I
600
2.0
800
1000
3.0
C
- (A)
V
ce
ge
1200
- (V)
= 20/15/12/10V
A : R
B : R
C : R
4.0
g
g
1400
A
B
C
g
= 7
= 4.7
= 3.3
1600
5.0
2000
1600
3200
2800
2400
1200
450
400
350
300
250
200
150
100
400
800
50
0
Fig.8 Typical turn-on energy vs collector current
0
0
0
Conditions:
T
V
V
Common emitter
T
case
CE
GE
case
200
= 600V,
= 15V
Fig.6 Typical output characteristics
= 125˚C,
= 125˚C
1.0
400
Collector-emitter voltage, V
Collector current, I
600
2.0
800
3.0
1000
C
- (A)
V
ge
ce
= 20/15/12/10V
1200
- (V)
A : R
B : R
C : R
4.0
A
C
B
1400
g
g
g
= 7
= 4.7
= 3.3
1600
5.0