GP1600FSS12 Dynex Semiconductor, GP1600FSS12 Datasheet - Page 8

• Manufacturer Part Number: GP1600FSS12
• Description: Powerline N-channel Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1600FSS12
8/11
10000
1000
3200
2800
2400
2000
1600
1200
100
800
400
10
1
0
1
0
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Fig.13 Diode typical forward characteristics
I
C
Fig.15 Forward bias safe operating area
max. (single pulse)
0.5
Collector-emitter voltage, V
10
1
Forward voltage, V
1.5
100
T
j
= 25˚C
2
F
- (V)
ce
2.5
- (V)
1000
T
t
p
j
100 s
= 125˚C
50 s
= 1ms
3
10000
3.5
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
100
800
600
400
200
0.1
10
0.001
0
1
0
Conditions:
V
R
T
GE
case
g
Fig.14 Reverse bias safe operating area
= 3.3
Fig.16 Transient thermal impedance
= 15V
= 125˚C
200
0.01
Collector-emitter voltage, V
400
Pulse width, t
600
0.1
p
- (s)
800
CE
- (V)
1
1000
Transistor
Diode
1200
10