BSM400GB60DN2 Siemens (acquired by Infineon Technologies Corporation), BSM400GB60DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM400GB60DN2
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
Semiconductor Group
C
tot
I
tot
C
= ( T
= ( T
1500
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
500
400
350
300
250
200
150
100
50
W
A
0
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0 , T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= ( V
K/W
10
10
10
10
10
10
10
10
10
10
10
= ( t
A
-1
-2
-3
-4
-5
4
3
2
1
0
0
10
10
CE
0
-5
)
p
)
single pulse
10
p
-4
10
/ T
C
1
= 25°C , T
BSM 400 GB 60 DN2
10
-3
10
2
10
j
-2
DC
IGBT
t p = 60.0µs
150 °C
V
100 µs
1 ms
10 ms
D = 0.50
Apr-25-1997
10
10
V
t
-1
3
p
0.20
0.10
0.05
0.02
0.01
CE
s
10
0