BSM400GB60DN2 Siemens (acquired by Infineon Technologies Corporation), BSM400GB60DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM400GB60DN2
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
I
parameter: V
Cpuls
Cpuls
V
GE
GE
/ I
= ( Q
C
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0.0
0
Gate
CE
100
C puls
0.4
)
GE
)
,
= 15 V
200
0.8
T
= 400 A
j
= 150°C
300
1.2
100 V
1.6
400
2.0
500
2.4
600
300 V
Q
µC
V
V
Gate
CE
3.2
800
6
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
parameter: V
Csc
parameter: V
I
Csc
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
0
CE
0
CE
di/dt = 500A/µs
° allowed numbers of
° time between short
short circuit: <1000
circuit: >1s
)
) , T
100
5
GE
GE
1500A/µs
2500A/µs
j
= ± 15 V, t
= 150°C
200
= 0 V, f = 1 MHz
10
300
BSM 400 GB 60 DN2
15
400
SC
20
500
25
10 µs, L < 25 nH
600
30
Apr-25-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
800
40