BSM400GB60DN2 Siemens (acquired by Infineon Technologies Corporation), BSM400GB60DN2 Datasheet - Page 5

• Manufacturer Part Number: BSM400GB60DN2
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
parameter: t
parameter: t
C
C
I
I
C
C
= f (V
= f (V
800
600
500
400
300
200
100
800
600
500
400
300
200
100
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 250 µs, V
= 250 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
800
600
500
400
300
200
100
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 250 µs, T
1
BSM 400 GB 60 DN2
2
j
= 125 °C
3
V
Apr-25-1997
V
CE
5