HY29F080 Hynix Semiconductor, HY29F080 Datasheet - Page 18

• Manufacturer Part Number: HY29F080
• Description: 8 Megabit (1M X 8), 5 Volt-only, Flash Memory
• Manufacturer: Hynix Semiconductor

HY29F080
DQ[3] - Sector Erase Timer
After writing a Sector Erase command sequence,
the host may read DQ[3] to determine whether or
not an erase operation has begun.
sector erase time-out expires and the sector erase
operation commences, DQ[3] switches from a ‘0’
to a ‘1’. Refer to the “Sector Erase Command”
section for additional information. Note that the
sector erase timer does not apply to the Chip Erase
command.
After the initial Sector Erase command sequence
is issued, the system should read the status on
HARDWARE DATA PROTECTION
The HY29F080 provides several methods of pro-
tection to prevent accidental erasure or program-
ming which might otherwise be caused by spuri-
ous system level signals during V
power-down transitions, or from system noise.
These methods are described in the sections that
follow.
Command Sequences
Commands that may alter array data require a
sequence of cycles as described in Table 5. This
provides data protection against inadvertent writes.
Low V
To protect data during V
down, the device does not accept write cycles
when V
command register and all internal program/erase
circuits are disabled, and the device resets to the
Read mode. Writes are ignored until V
than V
signals to the control pins to prevent unintentional
writes when V
18
CC
LKO
CC
Write Inhibit
is less than V
. The system must provide the proper
CC
is greater than V
LKO
CC
(typically 3.7 volts). The
power-up and power-
CC
LKO
power-up and
.
CC
When the
is greater
DQ[7] (Data# Polling) or DQ[6] (Toggle Bit I) to
ensure that the device has accepted the command
sequence, and then read DQ[3]. If DQ[3] is a ‘1’,
the internally controlled erase cycle has begun and
all further sector erase data cycles or commands
(other than Erase Suspend) are ignored until the
erase operation is complete. If DQ[3] is a ‘0’, the
device will accept a sector erase data cycle to mark
an additional sector for erasure. To ensure that
the data cycles have been accepted, the system
software should check the status of DQ[3] prior to
and following each subsequent sector erase data
cycle. If DQ[3] is high on the second status check,
the last data cycle might not have been accepted.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by asserting any one of
the following conditions: OE# = V
WE# = V
must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to the Read mode on power-
up.
Sector Group Protection
Additional data protection is provided by the
HY29F080’s sector group protect feature, de-
scribed previously, which can be used to protect
sensitive areas of the Flash array from accidental
or unauthorized attempts to alter the data.
IH
. To initiate a write cycle, CE# and WE#
IL
and OE# = V
IL
IH
, CE# = V
during power
Rev. 6.1/May 01
IH
, or