RF1S60P03 Fairchild Semiconductor, RF1S60P03 Datasheet
RF1S60P03
Manufacturer Part Number
RF1S60P03
Description
60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
Manufacturer
Fairchild Semiconductor
Datasheet
1.RF1S60P03.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RF1S60P03
Manufacturer:
KA/INTRISII
Quantity:
12 500
Company:
Part Number:
RF1S60P03SM
Manufacturer:
KA/INTRISII
Quantity:
12 500
December 1995
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Features
• 60A, 30V
• r
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175
Description
The
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
NOTE: When ordering use the entire part number.
Formerly developmental type TA49045.
Symbol
Absolute Maximum Ratings
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
RFG60P03
RFP60P03
RF1S60P03
RF1S60P03SM
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
T
Derate above +25
DS(ON)
PART NUMBER
C
= +25
©
o
Harris Corporation 1995
S E M I C O N D U C T O R
RFG60P03,
C Operating Temperature
o
= 0.027
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
PACKAGE AVAILABILITY
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
G
TO-247
TO-220AB
TO-262AA
TO-263AB
RFP60P03,
PACKAGE
T
D
S
C
= +25
RF1S60P03
o
C
RFG60P03
RFP60P03
F1S60P03
F1S60P03
BRAND
RF1S60P03, RF1S60P03SM
and
4-51
60A, 30V, Avalanche Rated, P-Channel
Packages
RFG60P03, RFP60P03,
Enhancement-Mode Power MOSFETs
SIDE METAL)
(BOTTOM
DRAIN
(FLANGE)
(FLANGE)
DRAIN
J
DRAIN
, T
GATE
SOURCE
DGR
DSS
STG
DM
GS
AS
D
D
T
JEDEC STYLE TO-247
Refer to Peak Current Curve
RF1S60P03, RFS60P03SM
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
RFG60P03, RFP60P03,
Refer to UIS Curve
-55 to +175
M
A
1.17
176
-30
-30
60
20
SOURCE
File Number
(FLANGE)
SOURCE
DRAIN
DRAIN
SOURCE
GATE
DRAIN
GATE
DRAIN
GATE
UNITS
W/
o
W
V
V
V
A
C
o
3951.1
C
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