RF1S60P03 Fairchild Semiconductor, RF1S60P03 Datasheet - Page 3

• Manufacturer Part Number: RF1S60P03
• Description: 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
• Manufacturer: Fairchild Semiconductor

Typical Performance Curves
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
-500
-100
-120
-10
-70
-60
-50
-40
-30
-20
-10
-90
-60
-30
-1
0
0
-1
0.0
25
FIGURE 1. SAFE OPERATING AREA CURVE
V
GS
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
TEMPERATURE
= -20V
50
V
V
-1.5
DS
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
, DRAIN-TO-SOURCE VOLTAGE (V)
T
C
, CASE TEMPERATURE (
DS(ON)
75
PULSE DURATION = 250 s, T
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
-3.0
V
GS
V
GS
100
= -4.5V
V
= -10V
DSS
-10
-4.5
MAX = -30V
125
o
V
V
V
C)
V
GS
GS
GS
GS
-6.0
= -8V
= -7V
= -6V
150
= -5V
T
C
C
= +25
= +25
100ms
DC
100 s
10ms
1ms
o
o
175
-7.5
C
-60
C
4-53
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
-120
-10
-10
-90
-60
-30
-50
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
0.01
0
3
2
0.0
0.1
10
10
1
10
-6
V
FIGURE 4. PEAK CURRENT CAPABILITY
PULSE TEST
PULSE DURATION = 250 s
DUTY CYCLE = 0.5% MAX
V
-5
GS
GS
0.05
0.02
0.01
IMPEDANCE
0.5
0.2
0.1
= -20V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
= -10V
10
SINGLE PULSE
V
10
-5
-2.0
t , RECTANGULAR PULSE DURATION (s)
GS
-4
, GATE-TO-SOURCE VOLTAGE (V)
10
-4
t , PULSE WIDTH (ms)
10
FOR TEMPERATURES ABOVE +25
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-4.0
-3
10
-3
10
NOTES:
DUTY FACTOR: D = t
PEAK T
I
-2
=
10
-6.0
I
25
-2
J
= P
+25
10
P
175 T
----------------------- -
-1
10
-55
DM
DM
o
150
C
-1
–
o
-8.0
x Z
C
V
C
t
t
DD
T
10
1
2
+175
JC
C
10
1
0
= -15V
/t
= +25
0
+ T
2
o
C
C
-10.0
o
C
o
C
10
10
1
1