RF1S60P03 Fairchild Semiconductor, RF1S60P03 Datasheet - Page 4

• Manufacturer Part Number: RF1S60P03
• Description: 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
• Manufacturer: Fairchild Semiconductor

Typical Performance Curves
FIGURE 7. NORMALIZED r
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
4000
1000
5000
3000
2000
1.5
1.0
0.5
0.0
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
2.0
0
-80
2.0
1.5
1.0
0.5
0.0
0
-80
TEMPERATURE
VOLTAGE vs TEMPERATURE
-40
PULSE DURATION = 250 s, V
-40
V
-5
T
DS
J
T
, JUNCTION TEMPERATURE (
, DRAIN-TO-SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
0
0
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
DS(ON)
-10
40
40
C
C
C
ISS
OSS
vs JUNCTION
RSS
80
-15
80
GS
120
(Continued)
V
GS
120
= -10V, I
o
= 0V, f = 1MHz
C)
-20
o
C)
I
160
D
160
D
= -250 A
= -60A
200
-25
200
4-54
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
-30.0
-22.5
-15.0
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS
-7.5
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.5
1.0
0.5
0.0
0
-80
20
TEMPERATURE
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
V
I
I
G(REF)
G(ACT)
DD
25
-40
= BV
T
0.75 BV
0.50 BV
0.25 BV
J
T
DSS
, JUNCTION TEMPERATURE (
C
50
, CASE TEMPERATURE (
0
R
I
V
G(REF)
t, TIME ( s)
L
GS
DSS
DSS
DSS
= 0.5
= -10V
75
= -3mA
40
0.75 BV
0.50 BV
0.25 BV
100
V
80
DD
DSS
DSS
DSS
V
= BV
80
GS
= V
125
I
I
G(REF)
G(ACT)
120
o
DSS
C)
DS
o
, I
C)
D
150
= - 250 A
160
-10.0
-7.5
-5.0
-2.5
0.0
200
175