CEM6607 Chino-Excel Technology Corp., CEM6607 Datasheet
CEM6607
Manufacturer Part Number
CEM6607
Description
Dual P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chino-Excel Technology Corp.
Datasheet
1.CEM6607.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM6607
Manufacturer:
CET
Quantity:
20 000
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
Dual P-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
-60V, -3.8A, R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
DS(ON)
DS(ON)
Parameter
Parameter
= 125mΩ @V
= 86mΩ @V
a
GS
GS
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T
A
= 25 C unless otherwise noted
.
1
1
Symbol
Symbol
T
R
V
V
J
I
P
DM
,T
I
DS
GS
θJA
D
D
stg
-55 to 150
D
S
8
1
Limit
Limit
1
1
62.5
±
-3.8
-30
-15
2.0
CEM6607
20
D
G
7
2
1
1
http://www.cetsemi.com
D
S
6
3
2
2
Rev 2.
D
G
5
4
2
2
Units
Units
2006.Oct
C/W
W
V
V
A
A
C
5
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CEM6607 Summary of contents
Page 1
... Details are subject to change without notice . = -10V -4.5V DS(ON) SO unless otherwise noted A Symbol stg Symbol b R θJA 1 CEM6607 Limit Units -30 V ± ...
Page 2
... V = -10V GEN t d(off -30V -3.5A -10V 0V -3. CEM6607 Min Typ Max Units - µ 100 -100 125 1115 pF = 0V, 115 ...
Page 3
... Figure 6. Body Diode Forward Voltage 3 CEM6607 =125 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I =-3. =-10V GS - 100 150 T , Junction Temperature Figure 4. On-Resistance Variation with Temperature 0 ...
Page 4
... V OUT V OUT 10% 50 10% PULSE WIDTH Figure 10. Switching Waveforms - CEM6607 Limit 10ms 100ms Drain-Source Voltage (V) DS Figure 8. Maximum Safe Operating Area t off t r d(off 90% INVERTED 10% 90% 50% ...