CEM6607 Chino-Excel Technology Corp., CEM6607 Datasheet - Page 3

• Manufacturer Part Number: CEM6607
• Description: Dual P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Corp.

1500
1250
1000
750
500
250
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
15
12
9
6
3
0
0
-50
0
Figure 5. Gate Threshold Variation
0
C rss
V
I
D
Figure 1. Output Characteristics
DS
-V
=-250µA
-V
-25
T
0.5
=V
DS
J
DS
5
, Junction Temperature( C)
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
0
with Temperature
10
25
1
-V
50
1.5
GS
15
=10,8,6,4V
C oss
C iss
75
20
2
100
2.5
25
125
150
30
3
3
10
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
10
8
6
4
2
0
2
1
0
-1
-100
Figure 6. Body Diode Forward Voltage
0.4
-V
Figure 4. On-Resistance Variation
0
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=-3.8A
-V
, Body Diode Forward Voltage (V)
T
T
=-10V
J
GS
-50
J
1
=125 C
, Junction Temperature( C)
0.6
, Gate-to-Source Voltage (V)
with Temperature
CEM6607
0
2
25 C
0.8
50
3
1.0
100
-55 C
4
1.2
150
5
200
1.4
6