CEM6607 Chino-Excel Technology Corp., CEM6607 Datasheet - Page 2

• Manufacturer Part Number: CEM6607
• Description: Dual P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Corp.

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
c
d
d
b
c
T
A
= 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
C
C
I
C
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
g
I
GSSF
Q
GSSR
I
DSS
t
t
SD
oss
FS
iss
rss
S
r
gd
f
gs
DSS
g
2
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= -60V, V
= 20V, V
= -20V, V
= V
= -10V, I
= -4.5V, I
= -5V, I
= -30V, V
= -30V, I
= -10V, R
= -30V, I
= -10V
= 0V, I
DS
, I
D
S
D
D
= -250 µ A
= -3.8A
D
D
D
= -3.8A
DS
D
GS
DS
GS
GEN
= -250 µ A
= -3.5A,
= -3.8A
= -1A,
= -3A
= 0V
= 0V
= 0V
= 0V,
= 6
Min
-60
-1
CEM6607
1115
Typ
115
3.1
3.9
70
95
70
14
68
19
19
8
7
-100
Max
25.2
125
136
-3.8
-1.2
100
86
28
14
38
-1
-3
Units
m
m
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
5