BGA2717 Philips Semiconductors (Acquired by NXP), BGA2717 Datasheet - Page 2

• Manufacturer Part Number: BGA2717
• Description: Mmic Wideband Amplifiersilicon Monolithic Microwave Integrated Circuit (MMIC) Wideband Amplifier With Internal Matching Circuit in a 6-pin SOT363 SMD Plastic Package. Features Internally Matched to 50 Ohm Wide Frequency Range (3.2 GHZ at 3 DB Bandw
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
2004 Feb 02
V
I
NF
P
V
I
P
T
T
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
S
S
SYMBOL
s
SYMBOL
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 24 dB gain ( 1 dB up to 2.8 GHz)
Good linearity for low current ( IP3
Low second harmonic, 38 dBc at P
Low noise figure, 2.3 dB at 1 GHz
Unconditionally stable (K
LNB IF amplifiers
Cable systems
ISM
General purpose.
stg
j
S
L(sat)
S
tot
D
MMIC wideband amplifier
21
2.5 dBm output power at 1dB compression point
2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
PARAMETER
PARAMETER
2).
(out)
Drive
= 10 dBm)
= 40 dBm
CAUTION
f = 1 GHz
f = 1 GHz
f = 1 GHz
RF input AC coupled
T
s
2
PINNING
90 C
Marking code: 1B-.
CONDITIONS
CONDITIONS
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
2
S
5
4
3
MAM455
DESCRIPTION
2.3
5
8.0
24
1
65
TYP.
MIN.
Preliminary specification
6
4
6
6
15
200
+150
150
MAX.
MAX.
10
BGA2717
1
2, 5
3
V
mA
dB
dB
dBm
V
mA
mW
dBm
C
C
UNIT
UNIT