BGA2717 Philips Semiconductors (Acquired by NXP), BGA2717 Datasheet - Page 7

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BGA2717

Manufacturer Part Number
BGA2717
Description
Mmic Wideband Amplifiersilicon Monolithic Microwave Integrated Circuit (MMIC) Wideband Amplifier With Internal Matching Circuit in a 6-pin SOT363 SMD Plastic Package. Features Internally Matched to 50 Ohm Wide Frequency Range (3.2 GHZ at 3 DB Bandw
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
2004 Feb 02
MMIC wideband amplifier
I
Fig.9
f = 1 GHz; Z
(1) V
(2) V
(3) V
Fig.11 Load power as a function of drive power at
S
(dBm)
= 8.0 mA; V
P
|s
(dB)
L
S
S
S
12
|
= 5.5 V.
= 5 V.
= 4.5 V.
-10
-20
-30
-40
-50
-60
2
-10
-15
-20
-25
-30
Isolation ( s
typical values.
1 GHz; typical values.
0
-5
5
0
O
0
-50
S
= 50
= 5.0 V; P
1000
-40
D
12
= 35 dBm; Z
2
) as a function of frequency;
2000
-30
O
= 50
3000
f (MHz)
-20
(3)
P
D
(dBm)
4000
(1)
(2)
-10
7
P
(1) I
(2) I
(3) I
Fig.10 Insertion gain ( s
f = 2.2 GHz; Z
(1) V
(2) V
(3) V
Fig.12 Load power as a function of drive power at
D
(dBm)
|s
(dB)
= 35 dBm; Z
P
21
S
S
S
L
|
S
S
S
30
20
10
2
= 8.9 mA; V
= 8.0 mA; V
= 7.2 mA; V
0
= 5.5 V.
= 5 V.
= 4.5 V.
-10
-15
-20
-25
-30
0
frequency; typical values.
2.2 GHz; typical values.
-5
5
0
-50
O
= 50
O
S
S
S
= 50
1000
= 5.5 V.
= 5 V.
= 4.5 V.
-40
2000
21
-30
2
) as a function of
Preliminary specification
3000
f (MHz)
(2)
-20
BGA2717
P
D
(1)
(3)
(dBm)
4000
(1)
(3)
(2)
-10

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