BGA2717 Philips Semiconductors (Acquired by NXP), BGA2717 Datasheet - Page 3

• Manufacturer Part Number: BGA2717
• Description: Mmic Wideband Amplifiersilicon Monolithic Microwave Integrated Circuit (MMIC) Wideband Amplifier With Internal Matching Circuit in a 6-pin SOT363 SMD Plastic Package. Features Internally Matched to 50 Ohm Wide Frequency Range (3.2 GHZ at 3 DB Bandw
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
2004 Feb 02
R
I
R
R
NF
BW
K
P
P
IM2
IP3
IP3
S
S
SYMBOL
SYMBOL
s
s
L(sat)
L 1 dB
MMIC wideband amplifier
th j-s
L IN
L OUT
21
12
= 5 V; I
(in)
(out)
2
2
S
= 8 mA; T
thermal resistance from junction to solder point
supply current
insertion power gain
return losses input
return losses output
isolation
noise figure
bandwidth
stability factor
saturated load power
load power
second order
intermodulation
input intercept point
output intercept point
PARAMETER
j
= 25 C; unless otherwise specified.
PARAMETER
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at s
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
at P
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
D
21
= 40 dBm, f
2
3 dB below flat gain at 1 GHz 3
CONDITIONS
0
= 1 GHz
3
P
tot
= 200 mW; T
CONDITIONS
6
18
23
24
24
22
20
15
8
8
5
54
38
0
36
9
4
s
1
4
5
15
20
MIN.
90 C
3.2
8.0
18.6
23.9
25.0
25.1
24.0
22.1
19
9.4
10
6.8
55
39
2.3
2.9
13
1.7
1.4
0.1
38
10.0
6.3
2.6
3.1
13.9
18.8
TYP.
Preliminary specification
10
20
25
27
27
26
24
2.5
3.1
VALUE
MAX.
BGA2717
300
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBc
dBm
dBm
dBm
mA
dB
dB
dB
dBm
dBm
UNIT
UNIT
K/W