HY27UH088GDM Hynix Semiconductor, HY27UH088GDM Datasheet - Page 9

• Manufacturer Part Number: HY27UH088GDM
• Description: 8G-Bit NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.5 / Oct. 2005
NOTE:
1. L must be set to Low.
READ 1
READ FOR COPY-BACK
READ ID
RESET
PAGE PROGRAM (start)
COPY BACK PGM (start)
CACHE PROGRAM
BLOCK ERASE
READ STATUS REGISTER
RANDOM DATA INPUT
RANDOM DATA OUTPUT
CACHE READ START
CACHE READ EXIT
LOCK BLOCK
LOCK TIGHT
UNLOCK (start area)
UNLOCK (end area)
READ LOCK STATUS
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
1st Cycle
FUNCTION
IO0
A12
A20
A28
A0
A8
Table 3: Address Cycle Map(x8)
1st CYCLE
IO1
A13
A21
A29
A1
A9
00h
00h
90h
80h
85h
80h
60h
70h
85h
05h
00h
34h
2Ah
2Ch
23h
24h
7Ah
FFh
Table 4: Command Set
IO2
A10
A14
A22
A30
A2
2nd CYCLE
D0h
30h
35h
10h
10h
15h
E0h
31h
-
-
-
-
-
-
-
-
-
-
IO3
A11
A15
A23
L
A3
(1)
8Gbit (1Gx8bit) NAND Flash
IO4
3rd CYCLE
HY27UH088G(2/D)M Series
A16
A24
L
L
A4
(1)
(1)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IO5
A17
A25
L
L
A5
(1)
(1)
Acceptable command
during busy
IO6
A18
A26
L
L
A6
(1)
(1)
Preliminary
Yes
Yes
IO7
A19
A27
L
L
A7
(1)
(1)
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