2SB831 Renesas, 2SB831 Datasheet
2SB831
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2SB831 Summary of contents
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... Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party ...
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... Application Low frequency amplifier Complementary pair with 2SD1101 Outline MPAK 2SB831 Silicon PNP Epitaxial Emitter 2. Base 2 3. Collector ADE-208-1033 (Z) 1st. Edition Mar. 2001 ...
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... Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Notes: 1. The 2SB831 is grouped Pulse test Grade B C Mark 170 120 to 240 FE See characteristic curves of 2SB561 ...
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... Maximum Collector Dissipation Curve 150 100 100 Ambient Temperature 2SB831 150 ...
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... Package Dimensions + 0.10 0.4 – 0.05 0.95 1.9 2.95 0.16 0 – 0.1 0.95 0.2 0.2 Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit 0.10 – 0.06 MPAK — Conforms 0.011 g ...
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... Fax : <852>-(2)-730-0281 (Taipei Branch Office) URL : http://www.hitachi.com.hk 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. 2SB831 Colophon 2.0 ...