2SB831 Renesas, 2SB831 Datasheet - Page 4

• Manufacturer Part Number: 2SB831
• Description: Small Signal General Purpose Transistor
• Manufacturer: Renesas

2SB831
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Notes: 1. The 2SB831 is grouped by h
Grade
Mark
h
See characteristic curves of 2SB561.
FE
2. Pulse test
B
BB
85 to 170
C
BC
120 to 240
Symbol
V
V
V
I
h
V
V
CBO
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
FE
as follows.
Min
–25
–20
–5
—
85
—
—
Symbol
V
V
V
I
i
P
Tj
Tstg
C(peak)
C
Typ
—
—
—
—
—
—
—
CBO
CEO
EBO
C
Max
—
—
—
–1.0
240
–0.5
–1.0
Unit
V
V
V
V
V
Ratings
–25
–20
–5
–0.7
–1
150
150
–55 to +150
A
Test conditions
I
I
I
V
V
I
V
C
C
E
C
CB
CE
CE
= –10 A, I
= –10 A, I
= –1 mA, R
= –0.5 A, I
= –20 V, I
= –1 V, I
= –1 V, I
Unit
V
V
V
A
A
mW
C
C
C
C
B
C
E
E
BE
= –0.15 A*
= –0.15 A*
= –0.05 A*
= 0
= 0
= 0
=
2
2
2