ISL9N306AP3 Fairchild Semiconductor, ISL9N306AP3 Datasheet - Page 4

• Manufacturer Part Number: ISL9N306AP3
• Description: N-channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 7. Drain to Source On Resistance vs Gate
Figure 9. Normalized Gate Threshold Voltage vs
150
100
50
0
25
20
15
10
1.4
1.0
0.6
0.2
5
1
Figure 5. Transfer Characteristics
-80
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
I
DD
D
T
J
= 30A
= 15V
Voltage and Drain Current
= 25
-40
Junction Temperature
o
V
C
V
GS
GS
T
J
2
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4
, GATE TO SOURCE VOLTAGE (V)
T
I
0
J
D
= 175
I
= 61A
D
= 75A
o
40
C
3
6
T
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
J
C
(Continued)
= -55
80
= 25
V
GS
o
o
C
C
= V
120
DS
8
4
o
, I
C)
D
= 250 A
160
200
10
5
Breakdown Voltage vs Junction Temperature
150
100
Figure 8. Normalized Drain to Source On
50
0
Figure 10. Normalized Drain to Source
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
Resistance vs Junction Temperature
Figure 6. Saturation Characteristics
0
-80
-80
T
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= 25
o
-40
-40
C
V
DS
T
T
0.5
J
, DRAIN TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
0
0
V
GS
40
40
= 10V
1.0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
80
80
V
GS
120
120
= 10V, I
1.5
o
o
V
V
V
C)
C)
GS
GS
GS
I
Rev. B, February 2002
D
= 4.5V
160
160
= 3.5V
D
= 250 A
= 3V
= 75A
200
200
2.0