T15V4M08A TM tech, T15V4M08A Datasheet

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T15V4M08A

Manufacturer Part Number
T15V4M08A
Description
512K X 8 LOW POWER CMOS STATIC RAM
Manufacturer
TM tech
Datasheet
tm
SRAM
FEATURES
PART NUMBER EXAMPLES
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
PART NO.
T15V4M08A-55C
T15V4M08A-70P
48-pin CSP packages
TTL compatible , Tri-state output
Low-power consumption
55/70/100 ns access time
Equal access and cycle time
Single +2.7V to 3.6V Power Supply
Common I/O capability
Automatic power-down when deselected
Available in 32-pin TSOP-I(8x13.4mm) and
- Active: 40mA at 55ns
- Stand-by: 10uA (CMOS input/output)
CH
TE
PACKAGE CODE
P= TSOP-I(8x13.4)
C = CSP
512K X 8 LOW POWER
GENERAL DESCRIPTION
CMOS Static RAM organized as 524,288 words by
8 bits . This device is fabricated by high
performance CMOS technology. It can be
operated under wide power supply voltage range
from +2.7V to +3.6V.
outputs are TTL compatible and allow for direct
interfacing with common system bus structures.
Data retention is guaranteed at a power supply
voltage as low as 1.5V.
BLOCK DIAGRAM
WE
A18
P. 1
Vcc
Vss
OE
CE
A0
.
.
.
The T15V4M08A is a very Low Power
CMOS STATIC RAM
The T15V4M08A inputs and three-state
CONTROL
DECODER
CIRCUIT
Preliminary T15V4M08A
Publication Date: MAR. 2001
DATA I/O
ARRAY
CORE
Revision:0.A
I/O1
I/O8
.
.
.

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T15V4M08A Summary of contents

Page 1

... Preliminary T15V4M08A 512K X 8 LOW POWER CMOS STATIC RAM GENERAL DESCRIPTION The T15V4M08A is a very Low Power CMOS Static RAM organized as 524,288 words by 8 bits . This device is fabricated by high performance CMOS technology. It can be operated under wide power supply voltage range from +2 ...

Page 2

... SYMBOL DESCRIPTIONS Output enable input OE VCC Power supply V Ground connection P. 2 Preliminary T15V4M08A Publication Date: MAR ...

Page 3

... SYM MIN -55 STG I -40 BIAS DATA High-Z Data Out High-Z Data Preliminary T15V4M08A MAX. UNIT +3 0.7 W +150 C +85 C MODE Standby Active, Read Active, Output Disable Acitve, Write Publication Date: MAR. 2001 Revision:0.A ...

Page 4

... IH IL, =0mA =0mA, OUT - 3 0.2V,V 0.2V IN Vcc-0.2V IN =0mA, OUT - 0 Vcc-0.2V, 0. Vcc-0.2V - 0.4 2 Preliminary T15V4M08A -70 -100 UNIT Min Max Min Max - 0 0.4 - 0 ...

Page 5

... AC TEST LOADS AND WAVEFORM Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V4M08A SYM MIN TYP Vcc 2.7 3.0 Vss ...

Page 6

... Write Recovery Time Data Valid to Write End Data Hold Time Write Enable to Output in High-Z Output Active from Write End Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V4M08A ( =2.7 to 3.6V, Vss = 0V - -55 -70 SYM. Min ...

Page 7

... Data V alid ) (max.) is less than Preliminary T15V4M08A (min.) both for a given device LZ Publication Date: MAR. 2001 Revision:0.A ...

Page 8

... Preliminary T15V4M08A Publication Date: MAR. 2001 Revision:0.A ...

Page 9

... Operation Recovery Time DATA RETENTION WAVEFORM ( Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V4M08A SYM. TEST CONDITION V CE Vcc -0. CCDR t V Vcc -0.2V or ...

Page 10

... L 0.020±0.004 L1 0.031±0.008 y 0.002(MAX) è Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V4M08A Dimension in mm 1.10(MAX) 0.05±0.05 1.02(MAX) 0.20±0.10 0.15±0.02 11.8±0.2 8.0±0.1 13.4±0.2 0.5(TYP.) 0.5±0.1 0.8±0.2 0.05(MAX ...

Page 11

... Notes : 6.05 1. Bump counts : 48 (8 row x 6column Bump pitch : (x,y)=(0.75 x 0.75) typ. 8.05 3. All tolerance are ±0.050 unless otherwise specified ‘Y’ is coplanarity : 0.08(max) 0.35 5. Units : mm 1.20 - 0.30 0. Preliminary T15V4M08A Units : millimeters Bottom View A1 INDEX MARK 0.30 Publication Date: MAR. 2001 Revision:0.A ...

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