SST49LF040 Silicon Storage Technology, SST49LF040 Datasheet - Page 18

• Manufacturer Part Number: SST49LF040
• Description: 4 Mbit LPC Flash
• Manufacturer: Silicon Storage Technology

TABLE 10: R
TABLE 11: P
TABLE 12: R
TABLE 13: C
©2001 Silicon Storage Technology, Inc.
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
Symbol
T
T
T
-
-
LTH
PU-READ
PU-WRITE
DR
CYC
HIGH
LOW
I/O
IN
END
FIGURE 6: LCLK W
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
1
IN
ECOMMENDED
ELIABILITY
LOCK
0.3 V DD
C
0.4 V DD
APACITANCE (V
0.5 V DD
T
IMING
Parameter
LCLK Cycle Time
LCLK High Time
LCLK Low Time
LCLK Slew Rate (peak-to-peak)
RST# or INIT# Slew Rate
Parameter
Endurance
Data Retention
Latch Up
AVEFORM
C
HARACTERISTICS
P
S
ARAMETERS
Parameter
Power-up to Read Operation
Power-up to Write Operation
Description
I/O Pin Capacitance
Input Capacitance
YSTEM
DD
=3.3V, Ta=25 °C, f=1 Mhz, other pins open)
P
OWER
(LPC M
0.6 V DD
T high
-
UP
T
ODE
IMINGS
Specification
)
Minimum
100 + I
10,000
18
T cyc
100
DD
Min
30
11
11
50
1
Test Condition
Minimum
V
V
I/O
0.2 V DD
IN
T low
100
100
=0V
=0V
Cycles
Units
Years
mA
Max
4
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
4 Mbit LPC Flash
562 ILL F05.0
0.4 V DD p-to-p
(minimum)
Advance Information
Maximum
SST49LF040
S71213-00-000 11/01 562
12 pF
Units
6 pF
µs
µs
mV/ns
Units
V/ns
ns
ns
ns
T10.0 562
T11.0 562
T12.0 562
T13.0 562