TT8M2 Rohm, TT8M2 Datasheet
TT8M2
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TT8M2 Summary of contents
Page 1
... Low voltage drive. 3) High power package. Application Switching Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 TT8M2 Absolute maximum ratings (Ta=25°C) <Tr1 : Nch> Parameter Symbol Drain−source voltage Gate−source voltage Continuous Drain current Pulsed Continuous Source current ...
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... TT8M2 <Tr2 : Pch> Parameter Symbol Drain−source voltage Gate−source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed ∗ ≤ 10µs, Duty cycle ≤ 1% <Tr1 AND Tr2> Parameter Symbol Total power dissipation Channel temperature Range of Storage temperature ∗ ...
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... TT8M2 Electrical characteristics (Ta=25°C) < Characteristics for the Tr2( Pch ).> Symbol Min. Parameter Gate-source leakage I GSS −20 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.3 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward transfer admittance Y 2 ...
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... TT8M2 Electrical characteristics curves <Nch> 2.5 Ta=25°C Pulsed V = 10V 4. =4. 2. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.1 Typical Output Characteristics( Ⅰ ) 1000 Ta= 25°C Pulsed 4.5V GS 100 10 0 DRAIN-CURRENT : I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ ) ...
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... TT8M2 10 V =0V GS Pulsed 1 Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=-25°C 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1000 Ta=25°C R =10Ω 15V Pulsed =4.5V GS 100 t (off (on 0.01 0 DRAIN-CURRENT : I [A] D Fig.13 Switching Characteristics www.rohm.com 2009 ROHM Co., Ltd. All rights reserved. ○ ...
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... TT8M2 <Pch> -4. -2. -1. -1. Ta=25°C Pulsed -1. -1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.1 Typical Output Characteristics( Ⅰ ) 1000 Ta=25° -1.5V Pulsed -1. -2. -4.5V GS 100 10 0 DRAIN-CURRENT : -I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ ) 1000 V = -1.8V Ta=125° ...
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... TT8M2 300 Ta=25°C Pulsed 250 I = -2.5A D 200 150 100 -1. GATE-SOURCE VOLTAGE : -V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ciss 1000 Coss Crss 100 Ta=25°C f=1MHz V = 0.01 0 100 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.13 Typical Capacitance vs ...
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... TT8M2 Measurement circuits < Nch > D.U. Fig.1-1 Switching Time Measurement Circuit D.U.T. I G(Const Fig.2-1 Gate charge measurement circuit < Pch > D.U. Fig.3-1 Switching time measurement circuit ...
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... ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing ...