TT8M2 Rohm, TT8M2 Datasheet - Page 2

• Manufacturer Part Number: TT8M2
• Description: MOSFET
• Manufacturer: Rohm

<Tr2 : Pch>
∗ 1 Pw ≤ 10µs, Duty cycle ≤ 1%
<Tr1 AND Tr2>
< Characteristics for the Tr1( Nch ).>
∗Pulsed
∗
Total power dissipation
Channel temperature
Range of Storage temperature
∗Pulsed
○
TT8M2
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
2 Mounted on a ceramic board
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Forward voltage
c
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Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
I
C
V
DS (on)
C
C
Q
Q
GS (th)
d (on)
d (off)
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gs
gd
fs
f
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
0.5
2.2
Symbol
Symbol
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
Typ.
Typ.
180
3.2
0.9
0.4
65
70
95
60
35
30
20
20
−
−
−
−
−
7
−
∗ 1
∗ 1
∗ 2
−55 to +150
Max.
Max.
±10
130
1.5
1.2
90
95
−
1
−
−
−
−
−
−
−
−
−
−
−
Limits
Limits
±2.5
−0.8
1.25
−20
±10
−10
150
±10
1.0
Unit
Unit
mΩ
mΩ
mΩ
nC
nC
nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
R
R
V
R
I
V
V
D
D
D
D
D
S
2/8
GS
DS
DS
DS
DS
GS
GS
GS
= 2.5A, V
=1mA, V
=2.5A, V
=2.5A, V
=2.5A, V
DD
=1.2A
L
G
DD
L
=10Ω
=±12V, V
=30V, V
=10V, I
=10V, I
=10V
=0V
=4.5V
=4.5V
12.5Ω
6Ω, R
W / ELEMENT
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15V, I
15 V
W / TOTAL
Unit
Unit
°C
°C
V
V
A
A
A
A
Conditions
Conditions
GS
GS
GS
GS
G
GS
D
D
GS
D
=1mA
=2.5A
=10Ω
=0V
=4.5V
=4V
=2.5V
=2.5A
=0V
DS
=0V
=0V
2009.06 - Rev.A
Data Sheet
Datasheet pdf - http://www.DataSheet4U.net/