2SC4885 NEC, 2SC4885 Datasheet

no-image

2SC4885

Manufacturer Part Number
2SC4885
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD
Manufacturer
NEC
Datasheet
Document No. P10410EJ2V0DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
(Previous No, TC-2365)
FEATURES
• Excellent Low NF in Low Frequency Band
• Low Voltage Use
• Low C
• Low Noise Voltage : 90 mV TYP.
• Super Mini Mold Package. EIAJ : SC-70
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
*1 Pulse Measurement PW
h
Collector Cutoff Current
Emitter Cutoff Current
Collector to Base Saturation Voltage
DC Current Gain
Gain Bandwidth Product
Collecter Capacitance
Insertion Power Gain
Noise Figure
Noise Voltage
FE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Marking
Classification
Rank
h
FE
ob
PARAMETER
: 0.9 pF TYP.
60 to 150
R13
R13
NPN SILICON EPITAXIAL TRANSISTOR

350
3 PINS SUPER MINI MOLD
SYMBOL

V
V
V
I
P
T
T

C
V
s, Duty Cycle
j
stg
CBO
CEO
EBO
T
S
I
I
CE (sat)
h
C
NF
NV
CBO
EBO
f
21e
FE
T
ob

2
DATA SHEET
DATA SHEET
a
a
= 25
= 25

MIN.
2.5
7.0
60
55 to +125

 
120
125
 
3.0
C)
25
13
50
2 %
C)
TYP.
3.5
0.8
9.0
3.0
90
mW
mA


V
V
V
C
C
MAX.
150
200
0.1
0.1
0.3
1.2
UNIT
GHz
mV


pF
dB
dB
SILICON TRANSISTOR
V
A
A
V
V
h
V
V
V
V
V
See Test Cirucit
FE
CB
EB
CE
CE
CB
CE
CE
= 10, I
= 2 V, I
= 15 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
PACKAGE DIMENSIONS
2SC4885
TEST CONDITIONS
C
PIN CONNECTIONS
C
1.
2.
3.
C
C
E
C
C
(Units: mm)
= 5 mA
E
= 0
= 5 mA
= 5 mA
= 0, f = 1 MHz
= 5 mA, f = 1 GHz
= 5 mA, f = 1 GHz
= 0
2
1
Emitter
Base
Collector
1.25±0.1
2.1±0.1
*1
©
Marking
3
1993

Related parts for 2SC4885

2SC4885 Summary of contents

Page 1

... EBO V 0.3 CE (sat 150 FE f 2.5 3 0.8 1 7.0 9.0 21e NF 3 200  350 s, Duty Cycle  2 % SILICON TRANSISTOR 2SC4885 PACKAGE DIMENSIONS (Units: mm) 2.1±0.1 1.25±0 Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector UNIT TEST CONDITIONS  10, I ...

Page 2

... V -Collector to Emitter Voltage CURRENT GAIN vs. COLLECTOR CURRENT 150 MHz 100 50 100 0.1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 1 2SC4885 200 180 160 140 120 100 1.0 10 100 I -Collector Current- ...

Page 3

... INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 1 10 100 I -Collector Current- FLAT B.P.F. Amp. 0 1.0 kHz FLAT = mA 100 dB, FLAT ( 1.0 kHz 2SC4885 NV VTVM ...

Page 4

... S 22 MAG ANG  69.6 .913 18.0  59.2 .764 28.7  52.2 .653 34.1  50.2 .577 36.7  49.9 .528 37.8  49.9 .493 39.2  50.3 .469 40.3  51.5 .452 41.6  52.3 .440 43 ...

Page 5

... S 22 MAG ANG  78.4 .986 7.6  67.7 .954 14.3  58.6 .912 20.4  51.1 .863 25.4  44.4 .823 29.2  39.7 .785 32.6  35.4 .755 35.6  32.3 .729 38.4  29.4 .708 41 ...

Page 6

... S 22 MAG ANG  71.6 .943 15.4  59.3 .827 26.6  50.5 .724 33.9  46.1 .640 37.9  43.3 .583 40.7  41.9 .539 42.8  41.1 .509 44.8  41.3 .486 46.5  41.6 .468 48 ...

Page 7

... S 22 MAG ANG  68.7 .915 21.3  54.1 .760 36.1  44.9 .633 45.4  40.5 .540 50.6  38.2 .477 54.2  37.0 .431 57.2  36.1 .399 59.6  36.6 .375 62.0  36.7 .358 64 ...

Page 8

... S 22 MAG ANG  76.3 .976 11.1  63.2 .920 21.1  51.8 .853 29.4  44.0 .783 35.7  36.7 .727 40.8  31.9 .678 44.9  27.2 .642 48.6  23.9 .612 51.8  21.6 .588 55 ...

Page 9

... [MEMO] 2SC4885 9 ...

Page 10

... [MEMO] 10 2SC4885 ...

Page 11

... [MEMO] 2SC4885 11 ...

Page 12

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC4885 M4 96. 5 ...

Related keywords