2SC5011 NEC, 2SC5011 Datasheet - Page 2

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2SC5011

Manufacturer Part Number
2SC5011
Description
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
Manufacturer
NEC
Datasheet

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ELECTRICAL CHARACTERISTICS (T
*1 Pulse Measurement; PW
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
2
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
FE
Marking
Classification
Rank
h
FE
CHARACTERISTIC
50 to 100
R26
EB
350 s, Duty Cycle
80 to 160
SYMBOL
R27
|S
FB
I
I
h
C
NF
CBO
EBO
21e
f
FE
T
re
|
2
A
MIN.
125 to 250
= 25 ˚C)
50
11
R28
GB
2 % Pulsed.
TYP.
120
6.5
0.5
1.1
13
MAX.
250
1.0
1.0
0.9
2.0
UNIT
GHz
dB
dB
pF
A
A
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
CE
= 1 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
TEST CONDITION
C
C
C
E
C
C
E
= 0
= 20 mA,f = 1.0 GHz
= 7 mA,f = 1.0 GHz
= 0
= 20 mA*
= 20 mA
= 0, f = 1 MHz*
1
2SC5011
2

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