2SC5180 NEC, 2SC5180 Datasheet

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2SC5180

Manufacturer Part Number
2SC5180
Description
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
Manufacturer
NEC
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5180
Manufacturer:
NEC
Quantity:
20 000
Part Number:
2SC5180-T1
Manufacturer:
NEC
Quantity:
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Part Number:
2SC5180-T1-A
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Quantity:
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Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan
FEATURES
ORDERING INFORMATION
* Contact your NEC sales representatives to order samples for evaluation (available
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Caution;
2SC5180–T1
2SC5180–T2
Low current consumption and high gain
Supper Mini-Mold package
in batches of 50).
NUMBER
S
S
PART
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
21e
21e
2
2
= 12 dB TYP. @ V
= 11 dB TYP. @ V
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
3 000 units/reel
QUANTITY
FOR LOW-NOISE MICROWAVE AMPLIFICATION
CE
CE
= 2 V, I
= 1 V, I
(base) and No. 4 (emitter) facing the
(collector) and No. 2 (emitter) facing the
Embossed tape, 8 mm wide, pins No. 3
perforations
Embossed tape, 8 mm wide, pins No. 1
perforations
C
C
V
V
V
I
P
T
T
C
= 7 mA, f = 2 GHz
= 5 mA, f = 2 GHz
j
stg
CBO
CEO
EBO
T
A
= 25 C)
ARRANGEMENT
DATA SHEET
–65 to +150
150
10
30
5
3
2
mW
mA
V
V
V
C
C
SILICON TRANSISTOR
PACKAGE DIMENSIONS
PIN CONNECTIONS
2SC5180
(Units : mm)
1. Collector
2. Emitter
3. Base
4. Emitter
1.25 ± 0.1
2.1 ± 0.2
©
1994

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2SC5180 Summary of contents

Page 1

... DATA SHEET = 7 mA GHz mA GHz C ARRANGEMENT = CBO CEO EBO 150 –65 to +150 C stg SILICON TRANSISTOR 2SC5180 PACKAGE DIMENSIONS (Units : mm) 2.1 ± 0.2 1.25 ± 0.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter © 1994 ...

Page 2

... 21e 2 S 8.5 11 21e NF 1.5 2.0 NF 1.5 2 15.5 GHz GHz T C 0.3 0.5 re 2SC5180 CONDITIONS mA mA GHz mA GHz ...

Page 3

... GHz 2SC5180 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE = 2 V 0.5 1.0 V – Base to Emitter Voltage – CURRENT GAIN vs. COLLECTOR CURRENT 100 I – Collector Current – mA ...

Page 4

... NOISE FIGURE vs. COLLECTOR CURRENT GHz – Collector Current – FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0 MHz 0.4 0.3 0.2 0.1 0 100 1.0 2.0 V – Collector to Base Voltage – 2SC5180 3.0 4.0 5.0 ...

Page 5

... S22 MAG ANG 0.960 –21.2 0.887 –26.2 0.810 –32.8 0.788 –39.3 0.744 –44.5 0.692 –49.2 0.647 –54.7 0.602 –58.2 0.575 –61.2 S22 MAG ANG 0.819 –30.4 0.707 – ...

Page 6

... S22 MAG ANG 0.603 –33.1 0.516 –34.4 0.449 –35.9 0.431 –38.2 0.400 –40.5 0.377 –42.8 0.351 –46.1 0.338 –47.5 0.342 –50.4 S22 MAG ANG 0.968 –19.5 0.903 – ...

Page 7

... S22 MAG ANG 0.701 –31.1 0.601 –33.3 0.523 –35.7 0.501 –38.3 0.465 –40.4 0.436 –42.7 0.404 –45.9 0.389 –47.1 0.391 –49.2 S22 MAG ANG 0.660 –30.2 0.569 – ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2 2SC5180 M4 96.5 ...

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