TLP705 Toshiba Semiconductor, TLP705 Datasheet - Page 2

• Manufacturer Part Number: TLP705
• Description: Industrial Inverter IGBT/Power MOS FET Gate Drive
• Manufacturer: Toshiba Semiconductor

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Maximum Ratings
Recommended Operating Conditions
Operating frequency
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H. ≤ 60%)
Note 1: Pulse width P
Note 2: Exponential waveform pulse width P
Note 3: Exponential waveform I
Note 4: It is effective soldering area of Lead .
Note 5: Device considerd a two terminal device: pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted
Note 6: A ceramic capacitor(0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high
Input current, ON
Input voltage, OFF
Supply voltage
Peak output current
Operating temperature
Note 7: Input signal rise time (fall time)
Forward current
Forward current derating (Ta ≥ 85°C)
Peak transient forward current
Reverse voltage
Junction temperature
“H” peak output current
“L” peak output current
Output voltage
Supply voltage
Junction temperature
together.
gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Characteristics
Characteristics
W
(Ta
≤ 1 s, 300 pps
(Note 7)
25°C)
OPH
≤-0.25 A (≤80 ns) , I
I
OPH
V
Symbol
I
F (OFF)
F (ON)
V
T
CC
opr
/ I
0.5 s.
OPL
(Note 3)
(Note 4)
(Note 5)
(Note 1)
(Note 2)
(Note 2)
W
≤ 10 s , f ≤15 kHz
-
Min
10
10
0
40
2
Symbol
OPL
I
I
I
V
BV
T
F
T
T
OPH
I
OPL
V
V
Typ.
I
FP
T
T
/ Ta
CC
opr
stg
sol
f
F
O
R
j
j
≤+0.25 A (≤80 ns) ,Ta 100 °C
S
Max
100
0.8
15
20
0.15
55 to 125
40 to 100
Rating
5000
0.45
125
125
250
260
0.54
0.45
20
25
25
1
5
Unit
mA
°C
V
V
A
mA/°C
Vr m s
Unit
kHz
mA
°C
°C
°C
°C
°C
A
V
A
A
V
V
2004-10-19
TLP705
Datasheet pdf - http://www.DataSheet4U.net/