TLP705 Toshiba Semiconductor, TLP705 Datasheet - Page 3

• Manufacturer Part Number: TLP705
• Description: Industrial Inverter IGBT/Power MOS FET Gate Drive
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Isolation Characteristics
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
Output current
Output voltage
Supply current
Threshold input current
Threshold input voltage
Supply voltage
*: All typical values are at Ta
Note 8: Duration of I
Note 9: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest
Capacitance input to output
Isolation resistance
Isolation voltage
power consumption design.
General precaution to static electricity (ESD) is necessary for handling this component.
Characteristics
Characteristic
(Note 8)
O
time ≤ 50 s
“H” Level
“H” Level
“H” Level
“L” Level
“L” Level
“L” Level
L
H
H
L
25°C
(Ta = 25°C)
(Ta
∆V
Symbol
I
I
I
I
V
OPH1
OPH2
I
OPL1
OPL2
V
I
I
V
V
CCH
CCL
FLH
V
F
C
I
FHL
OH
CC
OL
/∆Ta
R
F
T
40 to 100°C, unless otherwise specified)
Symbol
BV
C
R
S
S
S
Circu
Test
it
1
2
3
4
5
6
V = 0 V, f = 1MHz
R.H. ≤ 60%,V
AC, 1 minute
AC, 1 second, in oil
DC,1 minute,in oil
I
I
V
V
V
I
V
I
V
V
V
V
V
F
F
F
F
R
CC
CC
CC
CC
O
CC
CC
3
open
0 V , f
10 mA, Ta
10 mA
10 mA
0 mA
5 V, Ta
10 to 20 V
15 V
15 V
10 V
15 V, V
15 V, V
Test Condition
Test Condition
1 MHz,Ta
S
O
O
= 500V
25°C
> 1 V
< 1 V
25°C
V
V
V
V
I
I
I
V
I
I
O
F
O
F
F
6-5
6-5
5-4
5-4
F
10 mA
10 mA
0 mA
100 mA,
0.8 V
25°C
100 mA,
4 V
10 V
2 V
10 V
(Note 5)
(Note 5)
1×10
5000
Min.
0.15
Min
0.15
0.3
6.0
0.8
―
―
―
10
0.3
12
10000
10000
Typ.
10
1.0
Typ.*
―
0.36
0.62
1.6
0.35
8.5
0.4
2.0
2.0
2.5
14
45
2.0
0.6
2004-10-19
Max.
―
―
―
―
―
Max
TLP705
1.8
1.0
3.0
3.0
10
20
8
V r m s
Unit
Vdc
mV/°C
pF
Ω
Unit
mA
mA
pF
V
A
V
V
V
A
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