MCR08B ON, MCR08B Datasheet - Page 2

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MCR08B

Manufacturer Part Number
MCR08B
Description
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Manufacturer
ON
Datasheet

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(1) Pulse Test: Pulse Width
(2) R GK = 1000
(3) R GK is not included in measurement.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Tab
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum)
Peak Repetitive Forward or Reverse Blocking Current (2)
Peak Forward On-State Voltage (1)
Gate Trigger Current (Continuous dc) (3)
Holding Current (3)
Gate Trigger Voltage (Continuous dc) (3)
Critical Rate-of-Rise of Off State Voltage
PCB Mounted per Figure 1
Measured on Anode Tab Adjacent to Epoxy
(V AK = Rated V DRM or V RRM , R GK = 1000 )
(I T = 1.0 A Peak)
(V AK = 12 Vdc, R L = 100 )
(V AK = 12 Vdc, Initiating Current = 20 mA)
(V AK = 12 Vdc, R L = 100 )
(V pk = Rated V DRM , T C = 110 C, R GK = 1000 , Exponential Method)
is included in measurement.
300 s, Duty Cycle
Characteristic
Characteristic
(T C = 25 C unless otherwise noted)
2%.
MCR08B, MCR08M
http://onsemi.com
T J = 25 C
T J = 110 C
2
I DRM , I RRM
Symbol
dv/dt
V TM
V GT
I GT
I H
Symbol
R JA
R JT
T L
Min
10
Typ
Value
156
260
25
Max
200
200
1.7
5.0
0.8
10
Volts
Volts
V/ s
Unit
Unit
mA
C/W
C/W
C
A
A
A

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