MCR08B ON, MCR08B Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
MCR08B
Manufacturer Part Number
MCR08B
Description
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Manufacturer
ON
Datasheet
1.MCR08B.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCR08BT1
Manufacturer:
ZETEX
Quantity:
1 300
Part Number:
MCR08BT1
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
MCR08BT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MCR08BT1G
Manufacturer:
ON/安森美
Quantity:
20 000
10000
1000
100
500
100
1.0
0.1
5.0
1.0
50
10
10
1.0
10
Voltage and Gate-Cathode Termination Resistance
Figure 16. Exponential Static dv/dt versus Peak
400 V
Figure 14. Holding Current Range versus
10
R GK , GATE-CATHODE RESISTANCE (OHMS)
R GK , GATE-CATHODE RESISTANCE (OHMS)
Gate-Cathode Resistance
300 V
200 V
100
500 V
100
I GT = 7 A
10000
1000
500
100
5.0
1.0
50
10
10
1000
100 V
Figure 18. Exponential Static dv/dt versus
Gate-Cathode Termination Resistance and
1000
T J = 25 C
Product Trigger Current Sensitivity
50 V
T J = 110 C
10,000
100
I GT = 5 A
I GT = 48 A
GATE-CATHODE RESISTANCE (OHMS)
MCR08B, MCR08M
http://onsemi.com
100,000
10,000
1000
I GT = 15 A
6
10000
10000
5000
1000
1000
500
100
500
100
5.0
1.0
0.5
0.1
5.0
1.0
Temperature and Gate-Cathode Termination Resistance
50
10
50
10
0.01
10
Figure 15. Exponential Static dv/dt versus Junction
Gate-Cathode Capacitance and Resistance
10,000
Figure 17. Exponential Static dv/dt versus
400 V (PEAK)
I GT = 70 A
T J = 110 C
100
R GK , GATE-CATHODE RESISTANCE (OHMS)
I GT = 35 A
C GK , GATE-CATHODE CAPACITANCE (nF)
0.1
100,000
125
R GK = 100
1000
R GK = 1.0 k
1.0
110
10,000
75
V pk = 400 V
10
R GK = 10 k
T J = 25
50
100,000
100