SI2303CDS Vishay Siliconix, SI2303CDS Datasheet

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SI2303CDS

Manufacturer Part Number
SI2303CDS
Description
P-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Part Number:
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Part Number:
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www.DataSheet.co.kr
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 160 °C/W.
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
MOSFET PRODUCT SUMMARY
V
DS
- 30
(V)
C
= 25 °C.
0.330 at V
0.190 at V
R
DS(on)
GS
GS
J
(Ω)
= - 4.5 V
= 150 °C)
= - 10 V
b, d
P-Channel 30-V (D-S) MOSFET
Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
I
D
- 2.7
- 2.1
(A)
Steady State
a
≤ 5 s
A
= 25 °C, unless otherwise noted
Q
G
S
g
2 nC
(Typ.)
1
2
Si2303CDS (N3)*
* Marking Code
(SOT-23)
L = 0.1 mH
Top View
T
T
T
T
T
T
T
T
T
T
TO-236
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
R
R
thJA
thJF
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Load Switch
3
D
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
g
stg
Tested
®
Typical
Power MOSFET
80
35
- 55 to 150
- 0.83
- 1.9
- 1.5
- 1.75
1.0
0.7
Limit
± 20
- 2.7
- 2.2
1.25
- 30
- 10
2.3
1.5
- 5
Maximum
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
120
55
Si2303CDS
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI2303CDS Summary of contents

Page 1

... D • 100 % 2.7 • 100 % UIS Tested 2.1 APPLICATIONS • Load Switch TO-236 (SOT-23 Top View Si2303CDS (N3)* * Marking Code Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free °C, unless otherwise noted ° ° ° ° ° ° ...

Page 2

... Si2303CDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... thru Si2303CDS Vishay Siliconix 1.0 0.8 0.6 0 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 300 240 C 180 iss ...

Page 4

... Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.6 0.8 1.0 1 250 µ 100 125 150 10 Limited by R DS(on °C ...

Page 5

... T - Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si2303CDS Vishay Siliconix 125 150 1.0 0.8 0.6 0.4 0.2 0 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...

Page 6

... Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...

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