SI2303CDS Vishay Siliconix, SI2303CDS Datasheet - Page 4

• Manufacturer Part Number: SI2303CDS
• Description: P-Channel MOSFET
• Manufacturer: Vishay Siliconix

www.DataSheet.co.kr
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.1
2.2
2.0
1.8
1.6
1.4
10
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
0.1
10
1
0.1
T
1.0
J
Limited by R
= 25 °C
125
* V
Single Pulse
T
GS
A
= 25 °C
1.2
> minimum V
150
V
DS
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
1
GS
BVDSS Limited
at which R
10
DS(on)
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
1
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
100
4
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
8
1
Time (s)
S-80798-Rev. A, 14-Apr-08
Document Number: 69991
12
10
I
T
D
T
J
J
100
= 1.9 A
= 125 °C
16
= 25 °C
1000
20
Datasheet pdf - http://www.DataSheet4U.net/