SI2303CDS Vishay Siliconix, SI2303CDS Datasheet - Page 3

• Manufacturer Part Number: SI2303CDS
• Description: P-Channel MOSFET
• Manufacturer: Vishay Siliconix

w w w . D a t a S h e e t . c o . k r
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
0.5
0.4
0.3
0.2
0.1
10
10
0
8
6
4
2
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 1.9 A
V
GS
2
1
V
= 4.5 V
DS
Output Characteristics
1
Q
- Drain-to-Source Voltage (V)
g
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
4
2
V
DS
2
V
GS
= 15 V
6
3
= 10 V
V
GS
V
V
= 10 thru 5 V
V
DS
GS
3
GS
8
= 24 V
4
= 4 V
= 3 V
10
5
4
300
240
180
120
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
60
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
6
V
V
DS
T
GS
1
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
V
T
oss
GS
C
25
= 25 °C
Capacitance
12
= 10 V, I
T
C
= 125 °C
C
50
2
iss
Vishay Siliconix
D
V
= 1.9 A
Si2303CDS
18
GS
75
= 4.5 V, I
www.vishay.com
100
T
3
C
24
= - 55 °C
D
= 1.4 A
125
150
30
4
3
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