2SK1399 NEC, 2SK1399 Datasheet

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2SK1399

Manufacturer Part Number
2SK1399
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
Manufacturer
NEC
Datasheet

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Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
Date Published March 2000 NS CP(K)
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
driven by 2.5-V power supply.
of driving current, it is suitable for appliances including VCR cameras and
headphone stereos which need power saving.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
Note PW
The 2SK1399 is an N-channel vertical type MOS FET which can be
The 2SK1399 is driven by low voltage and does not require consideration
Can be driven by a 3.0-V power source
Not necessary to consider driving current because of it is high input
impedance
Possible to reduce the number of parts by omitting the bias resistor
Can be used complementary with the 2SJ185
PART NUMBER
2SK1399
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
10 ms, Duty Cycle
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note
SC-59 (Mini Mold)
50 %
FOR HIGH SPEED SWITCHING
PACKAGE
The mark
A
= 25°C)
I
I
D(pulse)
V
V
D(DC)
T
T
T
P
DSS
GSS
opt
stg
DATA SHEET
ch
T
shows major revised points.
–55 to +150
–55 to +80
±100
±200
±7.0
MOS FIELD EFFECT TRANSISTOR
200
150
50
mW
mA
mA
°C
°C
°C
V
V
PACKAGE DRAWING (Unit : mm)
Gate
Gate
Protection
Diode
Marking: G12
EQUIVALENT CIRCUIT
1
2
Source
2SK1399
Drain
©
2.8 ± 0.2
1.5
Internal
Diode
3
Marking
Electrode
Connection
1.Source
2.Gate
3.Drain
1991, 2000
0.65
+0.1
–0.15

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2SK1399 Summary of contents

Page 1

... N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current suitable for appliances including VCR cameras and headphone stereos which need power saving. ...

Page 2

... (on d(on) r d(off off Data Sheet D14770EJ2V0DS00 2SK1399 MIN. TYP. MAX. UNIT 10 A ±5.0 A 0.9 1.2 1 100 TEST CIRCUIT 2 GATE CHARGE D ...

Page 3

... kHz 500 200 100 150 ˚C Data Sheet D14770EJ2V0DS00 2SK1399 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 60 90 120 150 180 210 240 T - Ambient Temperature - ˚ 150˚C A 75˚C 25˚C –25˚ ...

Page 4

... GATE TO SOURCE VOLTAGE 30 Pulse measurement I = 100 Gate to Source Voltage - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulse measurement Data Sheet D14770EJ2V0DS00 2SK1399 4 Drain Current - mA D ...

Page 5

... Data Sheet D14770EJ2V0DS00 2SK1399 5 ...

Page 6

... Data Sheet D14770EJ2V0DS00 2SK1399 ...

Page 7

... Data Sheet D14770EJ2V0DS00 2SK1399 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. 2SK1399 M7 98. 8 ...

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