2SK1824 NEC, 2SK1824 Datasheet

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2SK1824

Manufacturer Part Number
2SK1824
Description
N-CHANNEL MOS FET FOR SWITCHING
Manufacturer
NEC
Datasheet

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Document No. D11220EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
driven at 2.5 V.
because it is not necessary to consider the drive current, the
2SK1824 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
• Can be automatically mounted
• Can be directly driven by 3-V IC
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
The 2SK1824 is a N-channel vertical type MOS FET that is
Because this MOS FET can be driven on a low voltage and
Moreover, the 2SK1824 is housed in a super small mini-mold
package (SC-70)
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
PARAMETER
SYMBOL
V
V
I
I
P
T
T
T
N-CHANNEL MOS FET
D(DC)
D(pulse)
DSS
GSS
T
ch
opt
stg
DATA SHEET
FOR SWITCHING
A
= 25 ˚C)
MOS FIELD EFFECT TRANSISTOR
V
V
PW
Duty cycle
3.0 cm
GS
DS
= 0
= 0
10 ms
2
0.64 mm, ceramic substrate used
TEST CONDITIONS
50 %
Gate
protection
diode
PACKAGE DIMENSIONS (in mm)
Gate (G)
EQUIVALENT CIRCUIT
G
0.2
0.5
0.3 ± 0.05
Source (S)
1.6 ± 0.1
+0.1
–0
Drain (D)
1.0
D
0.5
2SK1824
–55 to +150
–55 to +80
S
Internal
diode
RATING
200
150
30
100
200
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: B1
7
0.75 ± 0.05
0.6
UNIT
mW
mA
mA
˚C
˚C
˚C
V
V
0 to 0.1
0.1
+0.1
–0.05
1996

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2SK1824 Summary of contents

Page 1

... The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving systems, such as VCR cameras and headphone stereo systems. ...

Page 2

... MHz iss DS GS oss rss GS(on 500 Gate L Voltage 0 Waveform Drain 0 Current Waveform 2SK1824 MIN. TYP. MAX. UNIT 1 0.8 1.0 1 100 ns 100 ns ...

Page 3

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 0.5 1 2SK1824 2 3.0 cm 0.64 mm Using ceramic substrate 60 90 120 150 180 - Ambient Temperature - ˚ Pulsed –25 ˚ ˚ ˚C 150 ˚C 3 100 ...

Page 4

... V DS 200 Pulsed 100 d(on) 0.3 0.1 300 0.3 0.4 V 2SK1824 MHz iss C oss C rss Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.5 0.6 0.7 0.8 0.9 1.0 1.1 - Source to Drain Voltage - V SD ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SK1824 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK1824 M4 94.11 ...

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