2SK1959 NEC, 2SK1959 Datasheet
2SK1959
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2SK1959 Summary of contents
Page 1
... N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. ...
Page 2
... A 0 1 1.0 MHz 0 GS(on 2SK1959 TYP. MAX. UNIT 1.0 A 3.0 A 0.8 1 0.8 3.2 0.36 0.6 0.28 0.5 160 pF 150 190 ns 180 ns 210 ns ...
Page 3
... 0.1 0.01 0.001 0.8 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 1 0.8 0.6 0.4 0 0.01 0.03 2SK1959 Drain to Source Voltage - ˚ ˚C –25 ˚ Gate to Source Voltage - ˚ ˚C –25 ˚ 2 0.1 0 Drain Current - A ...
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... V - Drain to Source Voltage - SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 1 0.1 0.01 0.001 8 10 0.2 0 SWITCHING CHARACTERISTICS 1 000 GS(on) 500 200 100 100 0.1 0.2 2SK1959 0.6 0.8 1 1.2 - Source to Drain Voltage - d(off) t d(on) 0 Drain Current - A D ...
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... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SK1959 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...
Page 6
... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK1959 M4 94.11 ...