2SK2053 NEC, 2SK2053 Datasheet
2SK2053
Manufacturer Part Number
2SK2053
Description
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Manufacturer
NEC
Datasheet
1.2SK2053.pdf
(6 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2053
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
2SK2053-T1
Manufacturer:
NEC
Quantity:
2 016
Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• New package intermediate between small signal and
• Gate can be driven by 1.5 V
• Low ON resistance
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
The 2SK2053 is an N-channel vertical MOS FET. Because
power types
R
R
DS(on)
DS(on)
= 0.40
= 0.12
PARAMETER
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MAX. @ V
MAX. @ V
GS
GS
SYMBOL
= 1.5 V, I
= 4.0 V, I
I
V
I
D(pulse)
V
D(DC)
T
T
T
P
DSS
GSS
opt
stg
ch
T
DATA SHEET
D
D
A
V
V
PW
7.5 cm
= 1.0 A
= 2.5 A
= 25 ˚C)
GS
DS
= 0
= 0
10 ms, duty cycle
2
MOS FIELD EFFECT TRANSISTOR
0.7 mm ceramic substrate used
TEST CONDITIONS
PACKAGE DIMENSIONS (in mm)
EQUIVALENT CURCUIT
Gate
protection
diode
Gate (G)
0.5 ±0.1
50 %
S
2.1
Source (S)
Drain (D)
5.7 ±0.1
2.0 ±0.2
4.2
D
0.85
±0.1
2SK2053
Internal
diode
G
0.5 ±0.1
–55 to +150
–20 to +60
RATING
PIN
CONNECTIONS
S:
D:
G:
150
10.0
2.0
16
7.0
5.0
Source
Drain
Gate
©
Marking: NA1
1.5 ±0.1
0.4 ±0.05
UNIT
˚C
˚C
˚C
W
V
V
A
A
1996
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