2SK2055 NEC, 2SK2055 Datasheet

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2SK2055

Manufacturer Part Number
2SK2055
Description
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Manufacturer
NEC
Datasheet

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Part Number:
2SK2055
Manufacturer:
NEC
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Document No. D11226EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• New package intermediate between small-signal and power
• Can be directly driven by output of 5-V IC
• Low ON resistance
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
The 2SK2055 is a N-channel MOS FET of a vertical type and
This product has a low ON resistance and superb switching
models
R
R
DS(on)
DS(on)
= 0.45
= 0.35
PARAMETER
MAX. @V
MAX. @V
GS
GS
FOR HIGH-SPEED SWITCHING
= 4 V, I
= 10 V, I
SYMBOL
V
V
I
I
P
T
T
N-CHANNEL MOS FET
D(DC)
D(pulse)
DSS
GSS
T
ch
stg
D
D
= 1.0 A
DATA SHEET
= 1.0 A
A
= 25 ˚C)
MOS FIELD EFFECT TRANSISTOR
V
V
PW
Duty cycle
7.5 cm
GS
DS
= 0
= 0
10 ms,
2
0.7 mm, ceramic substrate used
TEST CONDITIONS
50 %
Gate
protection
diode
PACKAGE DIMENSIONS (in mm)
Gate (G)
0.5 ±0.1
EQUIVALENT CIRCUIT
S
2.1
Source (S)
Drain (D)
5.7 ±0.1
2.0 ±0.2
4.2
D
0.85
±0.1
2SK2055
–55 to +150
Internal
diode
G
RATING
PIN CONNECTIONS
S:
D:
G:
100
150
2.0
0.5 ±0.1
2.0
4.0
20
Source
Drain
Gate
Marking: NA3
1.5 ±0.1
UNIT
˚C
˚C
W
V
V
A
A
0.4 ±0.05
1996

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2SK2055 Summary of contents

Page 1

... The 2SK2055 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output operating This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. FEATURES • New package intermediate between small-signal and power models • ...

Page 2

... 1 =1.0 A DS(on 1.0 A DS(on iss 1.0 MHz oss rss 1 GS(on 2SK2055 MIN. TYP. MAX. UNIT 1 0.8 1.2 2.0 V 2.0 S 0.28 0.45 0.24 0.35 530 pF 150 ...

Page 3

... 0.1 0.01 0.001 0.8 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.6 0.5 0.4 0.3 0.2 0.1 0 0.3 1 0.01 0.03 2SK2055 100 - Drain to Source Voltage - ˚ ˚C –25 ˚C 1 1.5 2 2.5 - Gate to Source Voltage - ˚ ˚C –25 ˚C 0.1 0 Drain Current - ...

Page 4

... GATE TO SOURCE VOLTAGE 0.5 0.4 0.3 0.2 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 500 200 100 MHz d(off d(on 2SK2055 Gate to Source Voltage - V C iss C oss C rss 100 - Drain to Source Voltage - V ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SK2055 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2055 M4 94.11 ...

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