2SK2090 NEC, 2SK2090 Datasheet
2SK2090
Available stocks
Related parts for 2SK2090
2SK2090 Summary of contents
Page 1
... N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. ...
Page 2
... 1.0 MHz mA GS(on 120 G L 2SK2090 TYP. MAX. UNIT 1.0 A 5.0 A 1 ...
Page 3
... DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 100 1 2 2SK2090 3 Drain to Source Voltage - –25˚ 25˚ C 125 ˚ 100 I - Drain Current - ˚ ˚ ...
Page 4
... CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0.5 0 MHz 0 100 GS(on 0.2 500 1000 V 2SK2090 C iss C oss C rss 100 - Drain to Source Voltage - V DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.4 0.6 0.8 1.0 - Source to Drain Voltage - V SD ...
Page 5
... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SK2090 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...
Page 6
... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2090 M4 94.11 ...