2SK2157 NEC, 2SK2157 Datasheet

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2SK2157

Manufacturer Part Number
2SK2157
Description
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Manufacturer
NEC
Datasheet

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Part Number:
2SK2157
Manufacturer:
NEC
Quantity:
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Document No. D11233EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
is a switching element that can be directly driven by the output of
an IC operating at 5 V. This product has a low ON resistance and
superb switching characteristics and is ideal for driving the actua-
tors and DC/DC converters.
FEATURES
• New package intermediate between small-signal and power
• Can be directly driven by output of 5-V IC
• Low ON resistance
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
The 2SK2157 is a N-channel MOS FET of a vertical type and
models
R
R
DS(on)
DS(on)
PARAMETER
0.15
0.10
@V
@V
GS
GS
= 4 V, I
= 10 V, I
FOR HIGH-SPEED SWITCHING
D
D
= 2.5 A
SYMBOL
= 2.5 A
V
V
I
I
P
T
T
N-CHANNEL MOS FET
D(DC)
D(pulse)
DSS
GSS
T
ch
stg
DATA SHEET
A
= 25 ˚C)
MOS FIELD EFFECT TRANSISTOR
V
V
PW
Duty cycle
7.5 cm
GS
DS
= 0
= 0
10 ms,
2
0.7 mm, ceramic substrate used
TEST CONDITIONS
50 %
PACKAGE DIMENSIONS (in mm)
0.5 ±0.1
Gate
protection
diode
Gate (G)
EQUIVALENT CIRCUIT
S
Marking: NA4
2.1
5.7 ±0.1
2.0 ±0.2
Source (S)
4.2
Drain (D)
D
0.85 ±0.1
2SK2157
G
0.5 ±0.1
Internal diode
–55 to +150
RATING
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
150
10.0
2.0
30
5.0
20
1.5 ±0.1
0.41 ±0.05
UNIT
˚C
˚C
W
V
V
A
A
1996

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2SK2157 Summary of contents

Page 1

... The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output operating This product has a low ON resistance and superb switching characteristics and is ideal for driving the actua- tors and DC/DC converters. FEATURES • ...

Page 2

... 2 =2.5 A DS(on 2.5 A DS(on iss 1.0 MHz oss rss 2 GS(on 2SK2157 MIN. TYP. MAX. UNIT 1 1.5 1.9 2.5 V 2.0 S 0.09 0.15 0.06 0.10 650 pF 400 pF 120 450 ns 285 ns 315 ns ...

Page 3

... TRANSFER CHARACTERISTICS 0.1 0.01 0.001 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.2 75 ˚C 0.1 0 0.001 0.01 1 2SK2157 100 - Drain to Source Voltage - ˚ ˚C –25 ˚C 1.5 2 2 Gate to Source Voltage - ˚ ˚C –25 ˚C 0 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.15 0.1 0. SWITCHING CHARACTERISTICS 1 000 GS(on) iss 500 C oss 200 100 C rss 0.1 0.2 50 100 1 2SK2157 2 Gate to Source Voltage - d(off d(on) 0 Drain Current - A D ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SK2157 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2157 M4 94.11 ...

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