2SK2357 NEC, 2SK2357 Datasheet

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2SK2357

Manufacturer Part Number
2SK2357
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
DESCRIPTION
designed for high voltage switching applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (2SK2357/2358)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
** Starting T
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
Low On-Resistance
2SK2357: R
2SK2358: R
Low C
High Avalanche Capability Ratings
Isolate TO-220 Package
PW
iss
10 s, Duty Cycle
ch
C
= 25 ˚C, R
DS(on)
DS(on)
iss
= 1050 pF TYP.
= 0.9
= 1.0
G
c
a
The information in this document is subject to change without notice.
= 25
= 25 ˚C)
= 25 ˚C)
(V
(V
1 %
N-CHANNEL POWER MOS FET
GS
GS
= 10 V, I
= 10 V, I
, V
GS
= 20 V
DATA SHEET
INDUSTRIAL USE
D
D
A
V
V
I
I
P
P
T
T
I
E
= 3.0 A)
= 3.0 A)
D(DC)
D(pulse)
AS
= 25 C)
DSS
GSS
T1
T2
ch
stg
AS
SWITCHING
2SK2357/2SK2358
–55 to +150 C
0
MOS FIELD EFFECT TRANSISTOR
450/500
150
2.0
6.0
35
17
6.0
30
24
mJ
W
W
V
V
A
A
A
C
0.7 ±0.1
2.54
MP-45F (ISOLATED TO-220)
Gate
PACKAGE DIMENSIONS
1
10.0 ±0.3
2 3
(in millimeters)
1.5 ±0.2
2.54
1.3 ±0.2
3.2 ±0.2
Source
Drain
1. Gate
2. Drain
3. Source
4.5 ±0.2
0.65 ±0.1
Body
Diode
©
2.7 ±0.2
2.5 ±0.1
1994

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2SK2357 Summary of contents

Page 1

... DESCRIPTION The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2357 0.9 (V DS(on) 2SK2358 1.0 (V DS(on) • Low 1050 pF TYP. iss iss • High Avalanche Capability Ratings • Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (T ...

Page 2

... Q 1 Test Circuit 2 Switching Time D.U. PG Duty Cycle 2SK2357/2SK2358 TEST CONDITIONS 2SK2357 3.0 A 2SK2358 3 DSS ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 1000 V 15 2SK2357/2SK2358 100 120 140 160 T - Case Temperature - °C c DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed Drain to Source Voltage - ...

Page 4

... PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 Pulsed 1.0 0.5 100 0 V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 4.0 3.0 2.0 1.0 0 100 –50 2SK2357/2SK2358 R = 62.5 °C/W th(ch- 3.57 °C/W th(ch- °C C Single Pulse 100 1000 Pulsed Gate to Source Voltage - V ...

Page 5

... V - Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 1000 = 0 GS 100 10 0.5 0.1 1.0 1000 I - Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 300 200 100 V DS 100 2SK2357/2SK2358 Pulsed 1.5 1 d(on) t d(off 150 100 ...

Page 6

... 100 125 Starting T - Starting Channel Temperature - ° SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD 100 6 1.0 100 1.0 m 150 175 L - Inductive Load - H 2SK2357/2SK2358 150 Starting T = 25° 100 m ...

Page 7

... Safe operating area of Power MOS FET. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2357/2SK2358 Document No. C11745E C11531E ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SK2357/2SK2358 M4 96.5 ...

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