2SK2414 NEC, 2SK2414 Datasheet - Page 2

• Manufacturer Part Number: 2SK2414
• Description: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
• Manufacturer: NEC

V
ELECTRICAL CHARACTERISTICS (T
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Test Circuit 1 Avalanche Capability
Test Circuit 3 Gate Charge
GS
Drain to Source On-Resistance
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 20 V
PG.
PG
CHARACTERISTIC
0
V
R
DD
I
G
G
= 2 mA
= 25
I
D
50
50
D.U.T.
D.U.T.
I
AS
BV
DSS
Starting T
V
DS
V
V
R
L
DD
DD
L
SYMBOL
R
R
V
| y
I
I
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
DSS
GSS
d(on)
r
d(off)
f
rr
ch
GS(off)
F(S-D)
DS(on)1
DS(on)2
iss
oss
rss
G
GS
GD
rr
fs
|
A
= 25 C)
Test Circuit 2 Switching Time
0
V
GS
t = 1 s
Duty Cycle
MIN.
1.0
7.0
PG.
t
R
TYP.
860
440
110
220
1.6
2.6
6.0
1.0
52
68
12
15
90
75
35
24
85
G
1 %
R
= 10
D.U.T.
G
MAX.
2.0
70
95
10
10
UNIT
m
m
V
nC
nC
nC
nC
R
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
DD
A
A
L
V
Wave
Form
I
Wave
Form
D
GS
V
V
V
V
V
V
V
V
f = 1 MHz
I
V
V
R
I
V
V
I
I
di/dt = 50 A/ s
D
D
F
F
2SK2414, 2SK2414-Z
GS
GS
DS
DS
DS
GS
DS
GS
GS(on)
DD
G
DD
GS
= 10 A, V
= 10 A, V
= 5.0 A
= 10 A
V
I
= 10
D
0
= 10 V, I
= 4 V, I
= 10 V, I
= 10 V, I
= 60 V, V
= 20 V, V
= 10 V
= 0
= 30 V
= 48 V
= 10 V
GS
10 %
TEST CONDITIONS
10 %
0
= 10 V
t
d (on)
t
90 %
on
D
GS
GS
D
D
D
= 5.0 A
t
GS
r
= 1 mA
= 5.0 A
= 0
= 0
= 5.0 A
DS
I
V
= 0
D
GS (on)
t
= 0
d (off)
t
off
90 %
90 %
t
10 %
f