2SK3000 Hitachi Semiconductor, 2SK3000 Datasheet - Page 3

• Manufacturer Part Number: 2SK3000
• Description: Silicon N Channel MOS FET Low Frequency Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
0.8
0.6
0.4
0.2
5.0
4.0
3.0
2.0
1.0
0
0
10 V
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Ambient Temperature
6 V
2
50
5 V
4.5 V
V
GS
4
100
= 2.5 V
4 V
3.5 V
3 V
6
Pulse Test
150
V
Ta (°C)
DS
8
(V)
200
10
100m
100µ
10m
0.05
0.02
0.01
0.05
1m
0.5
0.2
0.1
10
1
5
2
1
0
0.2 0.5
Note5 : When using the glass epoxy board
Ta = 25 °C
Operation in
this area is
limited by R
Drain to Source Voltage
Gate to Source Voltage
Typical Transfer Characteristics
Maximum Safe Operation Area
1
(10mm x 10mm x 1mm )
1
125°C
2
DS(on)
2
5
10
Tc = –25°C
3
25°C
20
V
Pulse Test
V
V
DS
GS
DS
50
4
t
= 5 V
50 µs
100 200
(V)
(V)
2SK3000
5
3