2SK3000 Hitachi Semiconductor, 2SK3000 Datasheet - Page 4

• Manufacturer Part Number: 2SK3000
• Description: Silicon N Channel MOS FET Low Frequency Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3000
4
1.0
0.8
0.6
0.4
0.2
–40
0.5
0.4
0.3
0.2
0.1
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
V
GS
Case Temperature
4
0
Gate to Source Voltage
= 4 V
10 V
vs. Temperature
40
8
I
D
= 0.45 A
12
80
0.45 A
I
Tc
Pulse Test
D
Pulse Test
0.45 A
= 2 A
120
16
1 A
(°C)
160
20
0.03
0.01
0.3
0.1
0.5
0.2
0.1
10
10
Static Drain to Source on State Resistance
3
1
0.01
5
2
1
0.1
Pulse Test
Forward Transfer Admittance vs.
0.03
0.2
Tc = –25 °C
Drain Current I
75 °C
vs. Drain Current
0.1
0.5
Drain Current
V
GS
0.3
1
25 °C
= 4 V
10 V
V
Pulse Test
D
2
1
DS
(A)
= 10 V
3
5
10
10