2SK3000 Hitachi Semiconductor, 2SK3000 Datasheet - Page 5

• Manufacturer Part Number: 2SK3000
• Description: Silicon N Channel MOS FET Low Frequency Power Switching
• Manufacturer: Hitachi Semiconductor

500
200
100
500
200
100
50
20
10
50
20
10
0.05
5
2
1
5
0
Drain to Source DiodeReverse Surge
Drain to Source Voltage V
0.1
Surge Pulse Width PW (mS)
Destruction Characteristics
0.2
4
Typical Capacitance vs.
Drain to Source Voltage
0.5
8
1
2
12
Coss
Ciss
Crss
5
Ta = 25°C
1 shot
V
f = 1 MHz
GS
10
16
DS
= 0
20
(V)
50
20
5000
2000
1000
500
200
100
50
0.05
5
4
3
2
1
0
Source to Drain Voltage
0.1
10 V
0.4
Reverse Drain Current vs.
Switching Characteristics
Source to Drain Voltage
Drain Current
0.2
t
d(off)
V
PW = 5 µs, duty < 1 %
t f
t
0.8
d(on)
GS
5 V
0.5
= 4 V, V
r t
1.2
V
GS
1
I
D
Pulse Test
DD
V
= 0
(A)
1.6
SD
= 10 V
2
2SK3000
(V)
2.0
5
5