2SK3107 NEC, 2SK3107 Datasheet

2SK3107

Manufacturer Part Number

2SK3107

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Manufacturer

NEC

Datasheet

1.2SK3107.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

2.5

use as a high-speed switching device in digital circuits.

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The 2SK3107 is a switching device which can be driven directly by a

The 2SK3107 has excellent switching characteristics, and is suitable for

Can be driven by a 2.5-V power source

Low gate cut-off voltage

V power source.

PART NUMBER

2. Mounted on ceramic substrate of 3.0 cm

2SK3107

D13802EJ2V0DS00 (2nd edition)

August 1999 NS CP(K)

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

Note2

FOR HIGH SPEED SWITCHING

SC-75(USM)

PACKAGE

1 %

= 25°C)

The mark

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

x 0.64 mm

–55 to +150

shows major revised points.

±0.1

±0.4

MOS FIELD EFFECT TRANSISTOR

200

150

±20

°C

PACKAGE DRAWING (Unit : mm)

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Marking: D1

0.2

0.5

0.3 ± 0.05

1.6 ± 0.1

+0.1

–0

1.0

2SK3107

0.5

Source

Drain

0.75 ± 0.05

Body

Diode

0.6

1999

0 to 0.1

0.1

+0.1

–0.05

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2SK3107 Summary of contents

Page 1

... N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5 V power source. - The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES Can be driven by a 2.5-V power source Low gate cut-off voltage ...

Page 2

... oss MHz rss d(on d(off) GS(on 300 Data Sheet D13802EJ2V0DS00 2SK3107 MIN. TYP. MAX. UNIT 1 A ±10 A 1.0 1 ...

Page 3

... 100 10 1 0.0001 4.0 5.0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.1 0.0001 Data Sheet D13802EJ2V0DS00 2SK3107 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 3 2 Drain to Source Voltage - ˚C A 25˚C 75˚C 125˚ ...

Page 4

... GATE TO SOURCE VOLTAGE 0 SWITCHING CHARACTERISTICS 1000 C iss C oss 100 C rss GS(on 100 0.1 1.2 1.0 Data Sheet D13802EJ2V0DS00 2SK3107 100 Gate to Source Voltage - d(on) t d(off Drain Current - A D ...

Page 5

... Data Sheet D13802EJ2V0DS00 2SK3107 5 ...

Page 6

... Data Sheet D13802EJ2V0DS00 2SK3107 ...

Page 7

... Data Sheet D13802EJ2V0DS00 2SK3107 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. 2SK3107 M7 98. 8 ...

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