2SK3230 NEC, 2SK3230 Datasheet

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2SK3230

Manufacturer Part Number
2SK3230
Description
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Manufacturer
NEC
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
FEATURES
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Notes 1. V
The 2SK3230 is suitable for converter of ECM.
Compact package
High forward transfer admittance
1000 S TYP. (I
1600 S TYP. (I
Includes diode and high resistance at G - S
PART NUMBER
2. Mounted on ceramic substrate of 3.0 cm
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
D15942EJ1V0DS00 (1st edition)
January 2002 NS CP(K)
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
GS
= –1.0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DSS
DSS
= 100 A)
= 200 A)
Note2
Note1
FOR IMPEDANCE CONVERTER OF ECM
SC-89 (TUSM)
www.DataSheet4U.com
PACKAGE
A
= 25°C)
V
V
JUNCTION FIELD EFFECT TRANSISTOR
T
P
GDO
I
DSX
I
T
D
G
stg
DATA SHEET
T
j
2
x 0.64 mm
–55 to +125
–20
200
125
20
10
10
mW
mA
mA
°C
°C
V
V
PACKAGE DRAWING (Unit: mm)
Gate
EQUIVALENT CIRCUIT
D
2SK3230
0.3 ± 0.05
1.6 ± 0.1
1.0
G
©
0.2
+0.1
–0
S
Source
Drain
0.1
+0.1
–0.05
2002

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2SK3230 Summary of contents

Page 1

... N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance 1000 S TYP 100 A) DSS 1600 S TYP 200 A) DSS Includes diode and high resistance ORDERING INFORMATION ...

Page 2

... 1.0 kHz fs1 5 1.0 kHz fs2 5 1.0 MHz iss See Test Circuit 180 150 to 300 200 to 450 NV (r.m.s) Data Sheet D15942EJ1V0DS 2SK3230 MIN. TYP. MAX. UNIT 40 600 A 0.1 1.0 V 350 S 350 S 7.0 8.0 pF 1.8 3 300 to 600 ...

Page 3

... GATE TO SOURCE VOLTAGE 1.0 0.8 0.6 120 140 160 V GS INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 +0 500 1000 Data Sheet D15942EJ1V0DS 2SK3230 0.4 0.2 0 0.2 0.4 0.6 0.8 1 Gate to Source Voltage - 1.0 MHz 100 - Drain to Source Voltage - V ...

Page 4

... V - Drain to Source Voltage - V DS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J7 900 720 540 360 180 Drain to Source Voltage - V DS Data Sheet D15942EJ1V0DS 2SK3230 0.15 V 0. 0.15 V 0. 0.15 V 0. 0.05 V 0. ...

Page 5

... Data Sheet D15942EJ1V0DS 2SK3230 5 ...

Page 6

... Data Sheet D15942EJ1V0DS 2SK3230 ...

Page 7

... Data Sheet D15942EJ1V0DS 2SK3230 7 ...

Page 8

... NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 2SK3230 Not all The M8E 00. 4 ...

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