2SK3507 NEC, 2SK3507 Datasheet - Page 7

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2SK3507

Manufacturer Part Number
2SK3507
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC
Datasheet

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PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
EQUIVALENT CIRCUIT
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Gate
Gate
Protection
Diode
1.14 MAX.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
4
1
Source
2.3
Drain
4.3 MIN.
6.5±0.2
5.1±0.3
2
2.3
Body
Diode
3
0.77±0.1
1.Gate
2.Drain
3.Source
4.Fin (Drain)
No Plating
2.3±0.1
1.0
Data Sheet D15387EJ1V0DS
0.5±0.1
0.03 to 0.25
No Plating
0.5±0.1
2SK3507
7

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