2SK3663 NEC, 2SK3663 Datasheet

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2SK3663

Manufacturer Part Number
2SK3663
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Manufacturer
NEC
Datasheet

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www.DataSheet4U.com
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
Remark Marking : G26
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
by a 2.5 V power source.
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The 2SK3663 is a switching device which can be driven directly
The 2SK3663 features a low on-state resistance and excellent
2.5 V drive available
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on FR-4 board of 2500 mm
2SK3663
D16529EJ1V0DS00 (1st edition)
January 2003 NS CP(K)
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
= 0.57
= 0.60
= 0.88
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
DS
GS
GS
GS
GS
= 0 V)
= 0 V)
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
1%
SC-70 (SSP)
PACKAGE
D
D
D
= 0.30 A)
= 0.30 A)
= 0.15 A)
A
= 25°C)
FOR SWITCHING
2
x 1.1 mm
DATA SHEET
I
D (pulse)
I
V
V
D (DC)
T
T
P
DSS
GSS
stg
ch
T
MOS FIELD EFFECT TRANSISTOR
55 to +150
±0.5
±2.0
±12
150
0.2
20
°C
°C
W
V
V
A
A
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
2SK3663
Source
Drain
Body
Diode
2003

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2SK3663 Summary of contents

Page 1

... N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. www.DataSheet4U.com The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES 2 ...

Page 2

... V F(S- 90 10% Wave Form 90% 90 10% 10 Wave Form d(on) d(off off Data Sheet D16529EJ1V0DS 2SK3663 MIN. TYP. MAX. UNIT 1 0.5 1.0 1.5 V 0.25 0.75 S 0.38 0.57 0.41 0.60 0.60 0. 0.87 V ...

Page 3

... 1 1.2 1 0.8 0.6 0.4 - Channel Temperature - 100 125 150 175 4.0 V 2.5 V 0.8 1.2 1.6 50 100 150 Data Sheet D16529EJ1V0DS 2SK3663 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.24 0.2 0.16 0.12 0.08 Mounted on FR-4 board of 2 2500 mm x 1 100 125 150 T - Ambient Temperature - C A FORWARD TRANSFER CHARACTERISTICS ...

Page 4

... Drain Current - 100 150 Data Sheet D16529EJ1V0DS 2SK3663 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 0. Pulsed 1 0.8 0.6 0.4 0 Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. ...

Page 5

... SWITCHING CHARACTERISTICS 1000 4 100 10 www.DataSheet4U.com 0. d(off d(on) 0 Drain Current - A Data Sheet D16529EJ1V0DS 2SK3663 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 1 0.1 0.01 0.001 0.4 0.6 0 Source to Drain Voltage - V F (S-D) 1.4 5 ...

Page 6

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3663 M8E 02. 11-1 ...

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